| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser in which emission efficiency can be enhanced on the low reflection film side using a single current injection electrode. SOLUTION: The semiconductor laser comprises an active layer 11 extending between first and second end faces facing each other, first and second light confinement layers 12 sandwiching the active layer, a single current injection electrode 14 for injecting a current into the active layer through the first light confinement layer, a resistance distribution layer 13 extending between the first and second end faces above the first light confinement layer, a low reflection film 33 located on the first end face, and a high/low reflection film 34 located on the second end face wherein the resistance distribution layer 13 has such a resistance distribution as the electric resistance on the first end face side becomes relatively lower than the electric resistance on the second end face side. COPYRIGHT: (C)2004,JPO
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