| 发明名称 |
METHOD FOR MAKING AN ANISOTROPIC CONDUCTIVE POLYMER FILM ON A SEMICONDUCTOR WAFER |
| 摘要 |
The invention concerns a method for making an anisotropic conductive polymer film (23, 24) on a semiconductor wafer (T) comprising, on one face, a passivation layer (12) wherein is provided at least one opening exposing a bond pad (11). The invention is useful for forming components (chips, integrated circuits) with high interconnect density. |
| 申请公布号 |
WO2004012226(A3) |
申请公布日期 |
2004.04.08 |
| 申请号 |
WO2003FR02312 |
申请日期 |
2003.07.22 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;SOURIAU, JEAN-CHARLES;RENARD, PIERRE;BRUN, JEAN |
发明人 |
SOURIAU, JEAN-CHARLES;RENARD, PIERRE;BRUN, JEAN |
| 分类号 |
H01L21/288;H01L21/60;H01L21/68;H01L21/768;H01L23/485;H01L23/532 |
主分类号 |
H01L21/288 |
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