发明名称 THERMAL TREATMENT DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide thermal treatment device that can more surely prevent the slip of a substrate when the device performs heat treatment on the substrate. SOLUTION: This thermal treatment device is provided with a boat 6 which holds wafers W in a state where the wafers W are respectively placed on a plurality of rollers 26a and 26b which come into rolling contact with the rear surfaces of the wafers W. The boat 6 is provided with positioning members 24 which come into sliding contact with the rear surfaces of the wafers W. In addition, the boat 6 is constituted to hold the wafers W in a state where the wafers W are horizontally supported by the positioning members 24 and rollers 26a and 26b by making the rolling directions of the rollers 26a and 26b coincide with radial directions from the sliding-contacting positions of the positioning members 24 with the wafers W. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004111781(A) 申请公布日期 2004.04.08
申请号 JP20020274655 申请日期 2002.09.20
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKAMURA NAOTO;NAKAMURA IWAO;SHIMADA TOMOHARU;ISHIGURO KENICHI;NAKAJIMA SADAO
分类号 H01L21/683;H01L21/22;H01L21/31;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/683
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