DEVICE AND METHOD FOR MEASURING FILM THICKNESS, AND DEVICE AND METHOD FOR MEASURING RELATIVE DIELECTRIC CONSTANT

摘要

PROBLEM TO BE SOLVED: To provide a measurement device for a film thickness or a measurement device for a relative dielectric constant that accurately measures the film thickness or relative dielectric constant of an insulator film which is formed on the surface of a semiconductor substrate.

SOLUTION: This measurement device 20 for the film thickness/relative dielectric constant measures the film thickness or relative dielectric constant of the insulator film formed on the surface of a wafer W. Further, the device 20 includes a charging processing part 1, a charge amount measuring part 2, and a surface potential measuring part 3 which are all linearly arranged. The charging processing part 1 charges the insulator film that is formed on the surface of the wafer by a corona discharge. The charge amount measuring part 2 carries out the C-V measurement in a non-contact manner with respect to the insulator film, and a charge amount given by the charging process is measured by determining a flat band voltage difference between before and after the charging process by the charging processing part 1. The surface potential measuring part 3 comprising a Kelvin probe 31 measures the surface potential on the surface of the insulator film in a non-contact manner.

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