| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein it is limited to enable an insulated gate semiconductor device to be improved in degree of integration and to be reduced in ON-resistance due to the fact that a process of forming a pattern by the use of a resist film and a mask is employed many times in a usual power MOSFET, there are so many limitations due to problems, such as alignment accuracy and the like, and a limitation is also imposed on the micronization of the insulated gate semicondcutor device. SOLUTION: The method of manufacturing the insulated gate semiconductor device is carried out through such a manner wherein a thin oxide film 3 formed on the surface is removed, a channel layer 4, a nitride film 5, a trench opening 6, a trench 7, a gate oxide film 11, a gate electrode 13, and an interlayer insulating film 14 are provided to a semiconductor substrate to serve as a drain region 2. Thereafter, the nitride film 5 is all removed to expose a gate electrode projection 13b, a source region 16 is formed in a self-aligned manner through the gate electrode projection 13b, and a body contact region 18 is formed in an self-aligned manner through an oxide film side wall 17 formed on the side of the gate electrode projection 13b, so that the insulated gate semiconductor device can be made very fine in size, increased in degree of integration, and reduced in ON-resistance. COPYRIGHT: (C)2004,JPO
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