发明名称 |
A MODULAR BIPOLAR-CMOS-DMOS ANALOG INTEGRATED CIRCUIT AND POWER TRANSISTOR TECHNOLOGY |
摘要 |
A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate. |
申请公布号 |
WO2004030036(A2) |
申请公布日期 |
2004.04.08 |
申请号 |
WO2003US29865 |
申请日期 |
2003.09.19 |
申请人 |
ADVANCED ANALOGIC TECHNOLOGIES, INC. |
发明人 |
WILLIAMS, RICHARD, K.;CORNELL, MICHAEL, E.;CHAN, WAI, TIEN |
分类号 |
H01L21/762;H01L21/8228;H01L21/8234;H01L21/8238;H01L29/423;H01L29/78 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|