A process for manufacturing a semiconductor device of the trench variety with reduced feature sizes and improved characteristics which process includes forming a termination structure having a field oxide disposed in a recess below the surface of the semiconductor die in which the active elements of the device are formed, and forming source regions after the major thermal steps have been performed.
申请公布号
WO2004030045(A2)
申请公布日期
2004.04.08
申请号
WO2003US31150
申请日期
2003.09.30
申请人
INTERNATIONAL RECTIFIER CORPORATION
发明人
MA, LING;AMALI, ADAM;KIYAWAT, SIDDHARTH;MIRCHANDANI, ASHITA;HE, DONALD;THAPAR, NARESH;SODHI, RITU;SPRING, KYLE;KINZER, DANIEL