METHOD OF FORMING INTEGRATED CIRCUIT INCLUDING ANTI-FUSE AND INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide the structure and the method of forming an integrated circuit including a low programming voltage anti-fuse on a semiconductor substrate.

SOLUTION: This integrated circuit is formed by doping a part of a semiconductor substrate with nitrogen and a charge carrier dopant source, forming a thin dielectric that is destroyed by the application of breakdown voltage on the doped portion of the semiconductor substrate, forming a first conductor that is separated from the semiconductor substrate by the thin dielectric, and forming a second conductor that is conductively connected with the doped portion of the semiconductor substrate.

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