| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a sublithographic opening in a material layer in a semiconductor process. SOLUTION: A first method of forming a sublithographic opening in a first layer of a first material begins by creating a lithographic opening on the first layer with the lithographic opening being over the location of the desired sublithographic opening. The first material in the first layer is partially removed from the lithographic opening. A sacrificial layer of the same material as the first layer is conformally deposited to fit the contour of the first layer, including over the lithographic opening. The resultant structure is anisotropically etched to etch the sacrificial layer as well as the first layer to form the sublithographic opening within the lithographic opening. A second method to form a sublithographic opening is to deposit a sacrificial layer such as poly-silicon. Eventually the sacrificial material is laterally expanded by converting the sacrificial material to a second sacrificial material, thereby decreasing the size of the lithographic opening down to a sublithographic opening. COPYRIGHT: (C)2004,JPO
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