| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical device including a III-V compound semiconductor layer containing gallium, indium, nitrogen, arsenic, and antimony, and has an excellent crystallinity. SOLUTION: A semiconductor light emitting element 1 is provided with a semiconductor layer part 5 placed on a principal face 3a of a GaAs semiconductor substrate 3. The semiconductor layer part 5 includes: a first III-V compound semiconductor layer 7; and a second III-V compound semiconductor layer 9. The first III-V compound semiconductor layer 7 contains gallium, arsenic, and antimony. The second III-V compound semiconductor layer 9 contains gallium, indium, nitrogen, arsenic, and antimony. The first III-V compound semiconductor layer 7 is placed on the GaAs semiconductor substrate 3. The second III-V compound semiconductor layer 9 is placed on the first III-V compound semiconductor layer 7. COPYRIGHT: (C)2004,JPO
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