| 摘要 |
PROBLEM TO BE SOLVED: To improve precision of a fine resist pattern by carrying out proximity effect correction and effecting correction on a rule basis for dimensional variation caused by the influence other than the proximity effect. SOLUTION: In pretreatment processes 1 and 2, a first exposure pattern is obtained by shifting an edge at the side of a design pattern having the closest proximity to a closest proximity design pattern byδ(W, Sp) that has been predetermined through an experimental formula, where Sp is a distance between the concerned design pattern and its closest proximity design pattern, and W is a width of the concerned design pattern in the direction of the distance Sp. In order to obtain a resist pattern of a first exposure pattern in a proximity effect correction process 3, the proximity effect is corrected in respect with the first exposure pattern based on the distribution function of exposure intensity to obtain a second exposure pattern whose pattern size is further changed and to obtain exposure data. COPYRIGHT: (C)2004,JPO
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