| 摘要 |
PROBLEM TO BE SOLVED: To provide proper saturation characteristics in a thin film transistor of LDD structure. SOLUTION: A part facing a gate electrode 17 of a polysilicon thin film 14 is set to be a channel region 14a formed of an intrinsic region. Surface sides on both sides of the region are set to be a lightly-doped source region 14b and a lightly-doped drain region 14c, which are formed of n-type impurity low concentration regions. Lower sides of them are set to be the intrinsic regions 14f and 14g, following the channel region 14a. Outer sides of them are set to be a heavily-doped source region 14d and heavily-doped drain region 14e, which are formed of n-type impurity heavily-doped regions. In the operation of a saturation region (Vd>Vg>Vth), a hole in an electronic hole pair, generated by collision and ionization near the lightly-doped drain region 14c of a channel 28 will not flow into the intrinsic region 14f below the channel 28 but will flow below the lightly-doped source region 14b. COPYRIGHT: (C)2004,JPO
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