发明名称 Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method
摘要 A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
申请公布号 US2004065885(A1) 申请公布日期 2004.04.08
申请号 US20030647539 申请日期 2003.08.26
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD., A JAPANESE CORPORATION 发明人 YAMAZAKI SHUNPEI;MIYANAGA AKIHARU;KOYAMA JUN;FUKUNAGA TAKESHI
分类号 H01L29/786;G02F1/136;G02F1/1362;H01L21/00;H01L21/322;H01L21/336;H01L21/77;H01L27/04;H01L27/06;H01L27/108;H01L27/11;H01L27/12;H01L29/78;H01L31/0392;(IPC1-7):H01L29/04 主分类号 H01L29/786
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