发明名称 |
Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method |
摘要 |
A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
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申请公布号 |
US2004065885(A1) |
申请公布日期 |
2004.04.08 |
申请号 |
US20030647539 |
申请日期 |
2003.08.26 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., A JAPANESE CORPORATION |
发明人 |
YAMAZAKI SHUNPEI;MIYANAGA AKIHARU;KOYAMA JUN;FUKUNAGA TAKESHI |
分类号 |
H01L29/786;G02F1/136;G02F1/1362;H01L21/00;H01L21/322;H01L21/336;H01L21/77;H01L27/04;H01L27/06;H01L27/108;H01L27/11;H01L27/12;H01L29/78;H01L31/0392;(IPC1-7):H01L29/04 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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