发明名称 |
UV-programmed P-type mask ROM and fabrication thereof |
摘要 |
A method for fabricating an UV-programmed P-type Mask ROM is described. The threshold voltages of all memory cells are raised at first to make each memory cell be in a first logic state, in which the channel is hard to switch on, in order to prevent a leakage current. After the bit lines and the word lines are formed, the Mask ROM is programmed by irradiating the substrate with UV light to inject electrons into the ONO layer under the openings to make the memory cells under the openings be in a second logic state.
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申请公布号 |
US2004065928(A1) |
申请公布日期 |
2004.04.08 |
申请号 |
US20030680023 |
申请日期 |
2003.10.06 |
申请人 |
KUO TUNG-CHENG;LIU CHIEN-HUNG;PAN SHYI-SHUH;HUANG SHOU-WEI |
发明人 |
KUO TUNG-CHENG;LIU CHIEN-HUNG;PAN SHYI-SHUH;HUANG SHOU-WEI |
分类号 |
H01L21/8246;H01L27/115;H01L29/792;(IPC1-7):H01L29/94;H01L21/82 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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地址 |
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