发明名称 |
CIRCUIT FOR DRIVING GATE OF POWER MOSFET |
摘要 |
A circuit for driving a gate of a power metal-oxide semiconductor field effect transistor (MOSFET), which uses a higher voltage than a gate controller is provided. The circuit is able to safely and effectively transmit an output signal of a gate controller irrespective of a frequency and a duty-cycle of the output signal when transmitting the output signal of the gate controller to the power MOSFET using a higher voltage than the gate controller. Accordingly, the circuit is suitable for a case where the duty-cycle of the output signal of the gate controller dramatically changes and the frequency is irregular. |
申请公布号 |
WO2004030212(A1) |
申请公布日期 |
2004.04.08 |
申请号 |
WO2003KR01984 |
申请日期 |
2003.09.29 |
申请人 |
DMB TECHNOLOGY CO., LTD.;RYOO, TAE-HA;JANG, BYUNG-TAK |
发明人 |
RYOO, TAE-HA;JANG, BYUNG-TAK |
分类号 |
H03K17/00;H03F3/217;H03K17/687 |
主分类号 |
H03K17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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