| 摘要 |
PURPOSE: An exposure mask of a semiconductor device is provided to be capable of preventing stitching and defects in SCALPEL(Scattering with Angular Limitation Projection Electron-beam Lithography) processing. CONSTITUTION: An exposure mask includes the first exposure mask(101) with a mask pattern and the second exposure mask(103) formed on the upper or lower of the first exposure mask. The second exposure mask(103) further includes a membrane layer, in which a portion corresponding to edge portion of the first exposure mask(101) has a relatively thick thickness compared to a portion corresponding to center portion, thereby reducing the exposure energy of the edge portion of the first exposure mask.
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