| 摘要 |
PROBLEM TO BE SOLVED: To enable a high-speed access without being influenced by a memory cell having the worst performance even when memory cells poor in performance are included. SOLUTION: This memory system comprises a memory 2 including a plurality of memory areas R1-R4 and operated based on the same principle, and an address conversion control circuit 1 for converting a logic address to a physical address based on the correspondence between the address spaces AS1-AS4 of the memory 2 and the memory areas R1-R4. The corresponding relation is regulated based on the unique correspondence related to the performance of the memory 2. COPYRIGHT: (C)2004,JPO
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