| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a current driving circuit in which reliability of the gate insulation film of a driver transistor is improved without reducing a driving current. <P>SOLUTION: A current driving circuit 2 receives voltage being more boosted than that during standby at the source terminal of a driver transistor P1 and operated when a current is supplied to a node ND1 to which a load circuit 6 is connected. A gate potential which is outputted to the driver transistor P1 by a gate potential control circuit 4 is raised in accordance with rise of the source potential of the driver transistor P1. Also, when driver transistors P1, N1 are turned off, a pre-charge circuit constituted of P channel MOS transistors P2 pre-charges the node N1 to the prescribed potential. <P>COPYRIGHT: (C)2004,JPO |
