| 发明名称 |
Non-contact etch annealing of strained layers |
| 摘要 |
The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.
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| 申请公布号 |
US2004067644(A1) |
申请公布日期 |
2004.04.08 |
| 申请号 |
US20020264393 |
申请日期 |
2002.10.04 |
| 申请人 |
MALIK IGOR J.;KANG SIEN G.;FUERFANGER MARTIN;KIRK HARRY;FLAT ARIEL;CURRENT MICHAEL IRA;ONG PHILIP JAMES |
发明人 |
MALIK IGOR J.;KANG SIEN G.;FUERFANGER MARTIN;KIRK HARRY;FLAT ARIEL;CURRENT MICHAEL IRA;ONG PHILIP JAMES |
| 分类号 |
C30B33/00;H01L21/20;H01L21/302;H01L21/3065;(IPC1-7):C30B1/00;H01L21/461 |
主分类号 |
C30B33/00 |
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