发明名称 |
Memory storage device which regulates sense voltages |
摘要 |
A memory storage device includes a memory cell configurable to have at least a first conductive state and includes a first and second conductor each electrically coupled to the memory cell. A regulation circuit is configured to regulate a sense voltage on the second conductor to be independent of a current conducted through the first conductor when the memory cell is configured to have the first conductive state.
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申请公布号 |
US2004066689(A1) |
申请公布日期 |
2004.04.08 |
申请号 |
US20020264153 |
申请日期 |
2002.10.02 |
申请人 |
BROCKLIN ANDREW L. VAN;FRICKE PETER;DA CUNHA JOHN M. |
发明人 |
BROCKLIN ANDREW L. VAN;FRICKE PETER;DA CUNHA JOHN M. |
分类号 |
G11C7/06;G11C7/08;G11C7/14;G11C17/16;G11C17/18;H01L27/10;(IPC1-7):G11C7/08 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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