| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electron beam excited plasma film formation system which prevents the film formation rate declinination and realizes the homogenization of the film composition, even when the kinds of a raw material gas are changed or when a mixed gas is used. <P>SOLUTION: An electron beam excited plasma film formation system 1 has an electron beam generating device 2a for generating an electron beam with high energy, an electron beam generating device 2b for generating an electron beam with low energy and a plasma reaction device 3 for generating plasma by electron beam excitation. When an electron beam with high energy is made incident, a plasma PBa consisting of gas molecules that requires high activation energy for ionization or dissociation is formed efficiently. When an electron beam with low energy is made incident, a plasma PBb consisting of gas molecules with low activation energy is formed efficiently. Each of the plasma PBa and PBb conducts chemical vapor deposition on a sample S and forms a multi-element thin film. <P>COPYRIGHT: (C)2004,JPO |
