| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device that can perform a new reading operation of a pixel signal. <P>SOLUTION: The solid-state imaging device comprises a semiconductor substrate having an n-type region, a p-type region formed on the n-type region of the semiconductor substrate, a first n-type region that is formed in the p-type region and constitutes a photo diode with the p-type region, a first gate structure that is formed on the surface of the semiconductor substrate, adjacent to a part of the first n-type region, and includes a charge storage region and a control gate, a second n-type region that is formed adjacent to the opposite side of the n-type region and constitutes a nonvolatile memory element with the first n-type region and the first gate structure, and a control circuit that applies to the control gate of the first gate structure voltage for tunneling charges accumulated in the first n-type region to the charge storage region. <P>COPYRIGHT: (C)2004,JPO</p> |
