| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the ease of cutting of the end section of a thin film resistor with laser light can be improved, and to provide a method of manufacturing the device. SOLUTION: Of an TEOS/SOG/TEOS film 3 underlying the thin film resistor 4, a step 3c is formed between the surface of a region 3a underlying the resistor 4 and the surface of the surrounding region 3b of the region 3a. The angles of the surfaces 5b and 6b of a TEOS film 5 and a P-type SiN film 6 formed on the resistor 4 are adjusted so that the laser light projected upon the peripheral regions 5a and 6a of the resistor 4 may reach the end section 4a of the resistor 4 by controlling the depth of the step 3c and the thicknesses of the TEOS film 5 and SiN film 6. COPYRIGHT: (C)2004,JPO
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