| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that reaction in an interface is promoted and mutual diffusion in the interface is promoted when a thin film is prepared on a substrate, such as an Si substrate which is high in reacting property, and as a result, the characteristics of both of the Si substrate and an oxide thin film are deteriorated and the oxide thin film is deposited on the Si substrate whereby it becomes a big trouble upon making the characteristics of a device, which are expected by a composite effect, practicable. SOLUTION: Upon preparing the metallic oxide thin film on the Si substrate, a cyclopentadiene organic metal is employed as a material and the thin film is prepared at the substrate temperature of 400°C or less. COPYRIGHT: (C)2004,JPO
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