发明名称 GRINDING APPARATUS AND METHOD FOR GRINDING SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To eliminate occurrence of a fault in conveying, etc. later when a semiconductor wafer is ground to be formed to a thickness as its rigidity is lowered and to make a finishing thickness of the wafer uniform. SOLUTION: The semiconductor wafer is fixed to a support substrate. Before the wafer is ground, a thickness recognizing means 15 recognizes the thickness of the substrate, a control means 42 obtains grinding conditions based on the recognized thickness of the substrate and controls grinding means 19, 31 based on the conditions to grind the wafer. Thus, even when the thickness of the substrate is uneven, the thickness of the wafer can be accurately and uniformly finished. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004111434(A) 申请公布日期 2004.04.08
申请号 JP20020268173 申请日期 2002.09.13
申请人 DISCO ABRASIVE SYST LTD 发明人 NANJO MASATOSHI;MORI TAKASHI
分类号 B24B49/02;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B49/02
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