发明名称 VACUUM TREATMENT SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a vacuum treatment system for stabilizing the distribution in the thickness of a film formed on a substrate. SOLUTION: In the vacuum treatment system 10, an electrode 106 of a bar for tubular and a substrate supporting stand are provided inside a film forming chamber, the substrate supporting stand supports a substrate and is grounded, a bar for tubular for gas introduction 11 is inserted into the electrode 106 of a bar for tubular , and an insulating bar for tubular 111 is connected to the bar for tubular for gas introduction 11, further, a film forming gas is fed from a gas feed bar for tubular through the insulating bar for tubular 111, and a high frequency current is fed, so that plasma is generated inside the film forming chamber to form a film on the substrate. An airtight member 15 is arranged respectively between the insulating bar for tubular 111 and the bar for tubular for gas introduction 11, between the insulating bar for tubular 111 and the gas feed bar for tubular, and between the electrode 106 of a bar for tubular and the bar for tubular for gas introduction 11. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004107725(A) 申请公布日期 2004.04.08
申请号 JP20020271524 申请日期 2002.09.18
申请人 MITSUBISHI HEAVY IND LTD 发明人 UENO MOICHI;SASAGAWA EISHIRO;OTSUBO EIICHIRO
分类号 C23C16/455;C23C16/505;H01L21/205;(IPC1-7):C23C16/455 主分类号 C23C16/455
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