发明名称 Method for forming low thermal budget sacrificial oxides
摘要 A method for forming a silicon dioxide layer over a silicon substrate including providing a substrate having exposed silicon portions; and, forming a silicon dioxide layer over the exposed silicon portions according to an oxide formation process including contacting the exposed silicon portions with an oxidizing solution comprising water and ozone.
申请公布号 US2004067639(A1) 申请公布日期 2004.04.08
申请号 US20020264489 申请日期 2002.10.05
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 PAI VINCENT;TU KUO-CHI;CHANG CHUNG-WEI;TSAI CHIA-SHIUNG;CHEN CHUN-YAO
分类号 H01L21/28;H01L21/316;(IPC1-7):H01L21/476 主分类号 H01L21/28
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