发明名称 |
Method for forming low thermal budget sacrificial oxides |
摘要 |
A method for forming a silicon dioxide layer over a silicon substrate including providing a substrate having exposed silicon portions; and, forming a silicon dioxide layer over the exposed silicon portions according to an oxide formation process including contacting the exposed silicon portions with an oxidizing solution comprising water and ozone.
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申请公布号 |
US2004067639(A1) |
申请公布日期 |
2004.04.08 |
申请号 |
US20020264489 |
申请日期 |
2002.10.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
PAI VINCENT;TU KUO-CHI;CHANG CHUNG-WEI;TSAI CHIA-SHIUNG;CHEN CHUN-YAO |
分类号 |
H01L21/28;H01L21/316;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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