Semiconductor memory module for acting as a dual in-line memory module has multiple dynamic or static/shadow RAM components and memory parameter devices

摘要

Memory parameter devices have lasting storage for the features of a semiconductor/dual in-line memory module (DIMM) (3) and are programmable e-fuses that fit on each semiconductor memory component/dynamic (DRAM) or static/shadow (SRAM) RAM component (11,12 ... 1n) and are in a closed or non-closed condition corresponding to stored parameter data. Independent claims are also included for the following: (a) A semiconductor component like dynamic RAM or static/shadow RAM for use on the semiconductor memory module; (b) and for a semiconductor memory system with a semiconductor memory module.