POWER SUPPLY CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE COMPRISING THE SAME, ESPECIALLY A BOOSTING CIRCUIT IS USED TO REDUCE VARIATION OF OUTPUT VOLTAGE

摘要

PURPOSE: A power supply circuit and a semiconductor memory device comprising the power supply circuit are provided to obtain a voltage having high voltage control accuracy by reducing the variation of an output voltage of a boosting circuit and thus to improve reliability of the device. CONSTITUTION: According to the semiconductor memory device, the first boosting circuit(131) has the first and the second output port and outputs the first voltage from the first and the second output port obtained by boosting a power supply voltage. The second boosting circuit(132) has an output port connected to the second output port of the first boosting circuit, and outputs the second voltage higher than the first voltage by boosting the power supply voltage. And a switching circuit is connected between the first and the second output port of the first boosting circuit and makes potential between the first and the second output port equal when the second boosting circuit stops voltage boosting operation.