Fast FLASH EPROM programming and pre-programming circuit design
摘要
<p>The programming circuit includes a voltage supply circuit coupled to a control gate and a source of a selected floating gate storage transistor. It supplies a gate programming potential across the control gate and the source in order to move charge in the floating gate. Control circuits, coupled to the voltage supply circuit vary the gate programming potential as a function of time. The voltage supply circuit includes a data-in circuit which applies a programme data voltage to a drain of the selected transistor. The gate programming potential increases during programming.</p>
申请公布号
EP1406269(A1)
申请公布日期
2004.04.07
申请号
EP20030078379
申请日期
1993.05.28
申请人
MACRONIX INTERNATIONAL CO., LTD.
发明人
YIU, TOM DANG-HSING;WAN, RAY L.;HSIAO, LING-WEN;LIN, TIEN-LER;SHONE, FUCHIA