METHOD OF FORMING ULTRA-FINE CONTACT HOLE OF SEMICONDUCTOR DEVICE WITHOUT OVER-HANG

摘要

PURPOSE: A method of forming a contact hole of a semiconductor device is provided to obtain a desired ultra-fine contact hole from a photoresist pattern without over-hang by flowing the photoresist pattern on a solidified intermediate layer using a heat treatment. CONSTITUTION: An intermediate layer with a predetermined thickness is formed on a semiconductor substrate. The intermediate layer is solidified. A photoresist layer is formed on the solidified intermediate layer. A photoresist pattern is formed by exposing and developing the photoresist layer using a contact mask. An ultra-fine contact hole is formed by flowing the photoresist pattern using a heat treatment.