Semiconductor device

摘要

The present invention provides a semiconductor device comprising as a core substrate a high thermo conductive ceramic substrate (9) having circuit patterns (28,29) on opposed surfaces. The high thermo conductive ceramic substrate (9) has on one surface a first circuit board (10) of at least one layer having a first cavity structure (12), and on the other surface a second circuit board (11) of at least one layer having a second cavity structure (12). Afirst active element (1) is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the first cavity, a second active element (13) is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the second cavity, an external electrode (4) is integrated with the surface of the second circuit board (11), and the first circuit board (10) surface is equipped with a cap (8) or sealed with resin. A heat dissipation via (26) is formed on the second circuit board (11), the high thermo conductive ceramic substrate (9) and the external electrode (4) on the surface of the second circuit board (11) are connected thermally to each other, and heat of at least one active element selected from the first active element (1) and the second active element is dissipated outward through the high thermo conductive ceramic substrate (9), the heat dissipation via (26) and the external electrode (4) on the surface of the second circuit board (11). The semiconductor device is downsized while securing transverse strength and heat dissipation characteristics of a heat-generating semiconductor element.