| 摘要 |
A semiconductor capacitor device has paired first and second MIM capacitors (C1, C2) on a semiconductor substrate (1). The first and second MIM capacitors include respective capacitor dielectric films (6, 8) having different compositions. Furthermore, upper electrodes (7, 9) and lower electrodes (5, 7) of the first and second MIM capacitors are connected in inverse parallel fashion. This arrangement facilitates mutual counteraction of the voltage dependences of the first and second MIM capacitors so as to make the voltage dependence of the capacitance of the capacitor device small. <IMAGE> |
