| 摘要 |
<p>A method for reducing dark current within a charge coupled device includes the steps of providing three or more phases of gates separated by an insulating layer from a buried channel of the first conductivity type in a well or substrate of the second conductivity type, and a clock driver for causing the transfer of charge through the charge coupled device; providing a barrier for separating charge packets when in accumulation state; applying, at a first time period, voltages to all phases of gates sufficient to cause the surface of the first conductivity type to be accumulated by dark current reducing charge carriers; after the first time period, applying, at each gate phase n having a capacitance C n to the layer of the second conductivity type, a voltage change on the gate phase n given by ” V n such that the sum of products of the capacitances and voltage changes is substantially zero after the voltage changes required to transfer charge through the charge coupled device, returning the voltages of all phases of gates back to the voltage sufficient to cause the surface of the first conductivity type to be accumulated by dark current reducing charge carriers.</p> |
