| 发明名称 |
HIGH SURFACE QUALITY GAN WAFER AND METHOD OF FABRICATING SAME |
| 摘要 |
A method for producing a high quality wafer comprising Al x Ga y In z N, wherein 0<y‰¤1 and x+y+z=1, the method comprising the steps of: chemically mechanically polishing (CMP) said Al x Ga y In z N wafer blank at its Ga-side utilizing an acidic CMP slurry comprising abrasive particles having particle sizes of less than 200 nm, an acid, and optionally at least one oxidizing agent. |
| 申请公布号 |
EP1404902(A1) |
申请公布日期 |
2004.04.07 |
| 申请号 |
EP20020739625 |
申请日期 |
2002.06.04 |
| 申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
XU, XUEPING;VAUDO, ROBERT, P. |
| 分类号 |
C30B25/02;C30B25/18;B24B1/00;B82Y15/00;C09G1/02;C09K3/14;C30B25/04;C30B29/38;C30B29/40;C30B33/00;G01Q30/12;H01L21/02;H01L21/304;H01L21/306;H01L21/321;H01L33/00;(IPC1-7):C30B25/02 |
主分类号 |
C30B25/02 |
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