发明名称 Current-perpendicular-to-the-plane structure magnetoresistive element
摘要 <p>A current-perpendicular-to-the-plane (CPP) structure magnetoresistive (MR) element (46, 46a) includes a pinned magnetic layer (53) made of a granular film. The granular film contains electrically-conductive magnetic crystal grains (57) and an dielectric material (58). The dielectric material serves to thin the path of the sensing electric current in the pinned magnetic layer. Moreover, the sensing electric current concentrates at the magnetic crystal grains. A larger variation can be obtained in the voltage of the sensing electric current. The output of the CPP structure MR element can be enhanced.</p>
申请公布号 EP1406273(A2) 申请公布日期 2004.04.07
申请号 EP20030255379 申请日期 2003.08.29
申请人 FUJITSU LIMITED 发明人 SUGAWARA, TAKAHIKO
分类号 G01R33/09;G11B5/39;H01F10/14;H01F10/30;H01F10/32;H01L43/08;H01L43/10;(IPC1-7):H01F10/32 主分类号 G01R33/09
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