发明名称 SOLAR CELL HAVING AN INTEGRAL MONOLITHICALLY GROWN BYPASS DIODE
摘要 The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact. <IMAGE>
申请公布号 EP1008188(A4) 申请公布日期 2004.04.07
申请号 EP19990925702 申请日期 1999.05.19
申请人 EMCORE CORPORATION 发明人 HO, FRANK;YEH, MILTON, Y.;CHU, CHAW-LONG;ILES, PETER, A.
分类号 H01L31/042;H01L27/142;H01L31/04;H01L31/0687 主分类号 H01L31/042
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