| 摘要 |
A magnetoresistive element includes a multilayered film comprising a magnetic detecting layer having a magnetoresistive effect, a pair of first antiferromagnetic layers in contact with the magnetic detecting layer of the multilayered film at a predetermined gap in the track width direction, the first antiferromagnetic layers aligning the magnetization direction of the magnetic detecting layer, and a pair of conductive layers in contact with the pair of first antiferromagnetic layers, the pair of conductive layers applying a detecting current to the multilayered film. The first antiferromagnetic layers are composed of an antiferromagnetic material having higher resistivity than that of the conductive layers. The conductive layers are superimposed with the corresponding first antiferromagnetic layers and are in contact with the magnetic detecting layer in a range of the predetermined gap. The distance between the pair of conductive layers defines a track width when the multilayered film detects an external magnetic field.
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