发明名称 |
Method for manufacturing thin film transistor panel |
摘要 |
The present invention provides a method for manufacturing a thin film transistor panel. At first, a gate line is formed on an insulating substrate. A gate insulating layer and a semiconductor layer which comprises an impurity-doped layer are deposited over the gate line sequentially. The semiconductor layer is patterned. A conductive pattern layer with a source electrode, a channel region and a drain electrode is formed over the patterned semiconductor layer. The impurity-doped layer is exposed at the channel region. Then, the impurity-doped layer at the channel region is insulated.
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申请公布号 |
US6716681(B2) |
申请公布日期 |
2004.04.06 |
申请号 |
US20020106493 |
申请日期 |
2002.03.27 |
申请人 |
CHI MEI OPTOELECTRONICS CORP. |
发明人 |
WEN CHUN BIN;TING CHIN LUNG |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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