发明名称 |
Method for forming a self-passivated copper interconnect structure |
摘要 |
An embodiment for a method for forming a self-passivated copper interconnect structure. An insulating layer is formed over a semiconductor structure. An opening is formed in the insulating layer. Next, we form a fill layer comprised of Cu and Ti over insulating layer. In a nitridation step, we nitridize the fill layer to form a self-passivation layer comprised of titanium nitride over the fill layer.
|
申请公布号 |
US6716753(B1) |
申请公布日期 |
2004.04.06 |
申请号 |
US20020207548 |
申请日期 |
2002.07.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
SHUE SHAU-LIN;LIANG MONG-SONG |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|