发明名称 VCSEL with monolithically integrated photodetector
摘要 A VCSEL has an active layer, a photodetector in one of the DBR gratings and with a radiation-absorbing layer that is arranged in an antinode of a laser mode. The laser and the photodetector are electrically driven by a common contact on a thick, heavily doped spacer layer that ensures low laser impedance and little electrical crosstalk between the laser and the photodetector.
申请公布号 US6717972(B2) 申请公布日期 2004.04.06
申请号 US20020211102 申请日期 2002.08.02
申请人 INFINEON TECHNOLOGIES AG 发明人 STEINLE GUNTHER;WOLF HANS-DIETRICH
分类号 H01L31/10;H01S5/026;H01S5/183;(IPC1-7):H01S5/00 主分类号 H01L31/10
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