发明名称 Castellation technique for improved lift-off of photoresist in thin-film device processing and a thin-film device made thereby
摘要 A castellation technique for improved lift-off of deposited thin film on photoresist in thin-film device processing of particular utility in the production of magnetic data transducers and recording heads. By correctly designing the edge boundary of a photoresist structure, enhanced regions of low resist edge bombardment and low deposit penetration may be achieved. These enhanced regions enable the lift-off of extra thick deposited regions that would not be otherwise achievable through the use of conventional techniques with and without castellation.
申请公布号 US6716515(B2) 申请公布日期 2004.04.06
申请号 US20030346326 申请日期 2003.01.16
申请人 QUANTUM CORPORATION 发明人 BASRA VIJAY K.;NEUMANN LAWRENCE G.
分类号 G03F7/26;G03F7/40;G11B5/31;G11B5/39;H01F41/14;H01F41/34;H01L43/08;H01L43/12;(IPC1-7):C03F7/00 主分类号 G03F7/26
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