发明名称 |
Castellation technique for improved lift-off of photoresist in thin-film device processing and a thin-film device made thereby |
摘要 |
A castellation technique for improved lift-off of deposited thin film on photoresist in thin-film device processing of particular utility in the production of magnetic data transducers and recording heads. By correctly designing the edge boundary of a photoresist structure, enhanced regions of low resist edge bombardment and low deposit penetration may be achieved. These enhanced regions enable the lift-off of extra thick deposited regions that would not be otherwise achievable through the use of conventional techniques with and without castellation.
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申请公布号 |
US6716515(B2) |
申请公布日期 |
2004.04.06 |
申请号 |
US20030346326 |
申请日期 |
2003.01.16 |
申请人 |
QUANTUM CORPORATION |
发明人 |
BASRA VIJAY K.;NEUMANN LAWRENCE G. |
分类号 |
G03F7/26;G03F7/40;G11B5/31;G11B5/39;H01F41/14;H01F41/34;H01L43/08;H01L43/12;(IPC1-7):C03F7/00 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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