Flash memory device with distributed coupling between array ground and substrate

摘要

A flash memory device is disclosed in which includes a plurality of flash memory transistors disposed within a doped well. The transistors are coupled at respective sources to an array ground node via a plurality of array ground lines. A plurality of switching devices distributed throughout the doped well switchingly couple the array ground lines to the doped well to reduce an elevated voltage otherwise present on the array ground lines when the array ground lines are heavily loaded.