| 发明名称 |
Pattern formation method |
| 摘要 |
After pre-baking a resist film, a solvent included in the resist film is vaporized. After vaporizing the solvent included in the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light in vacuum. The resist film is developed after the pattern exposure, so as to form a resist pattern.
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| 申请公布号 |
US6716730(B2) |
申请公布日期 |
2004.04.06 |
| 申请号 |
US20030339602 |
申请日期 |
2003.01.10 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ENDO MASAYUKI;SASAGO MASARU |
| 分类号 |
G03F7/039;G03F7/004;G03F7/16;G03F7/20;G03F7/38;H01L21/027;(IPC1-7):H01L21/22;H01L21/38 |
主分类号 |
G03F7/039 |
| 代理机构 |
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