| 摘要 |
This invention relates to nano-lithography with pi-conjugated azo dyes and azo-metal complexes represented by formula 1 or formula 2(Korea Pat. Appln. Nos. 2001-6879~6880), which has both electron-donating and electron-accepting groups in the molecular structures, as a resist on Si substrate by using an AFM anodization. lithography. Developing optimum conditions of scan speed, bias voltage, and resist materials are key issues for achieving a high resolution patterning on various substrates. We accomplished nanometer-scale patterning in approximately 35 nm dimensions.
|
