发明名称 |
Treatment of low-k dielectric material for CMP |
摘要 |
The present invention discloses a method including providing a substrate; forming a dielectric material over the substrate; forming an opening in the dielectric material; treating a surface of the dielectric material; forming a conductor in the opening; and planarizing the conductor.The present invention further discloses a structure including a substrate; a dielectric material located over the substrate, the dielectric material having a low dielectric constant; an opening located in the dielectric material; a treated layer located over a sidewall of the opening; and a conductor located in the opening and over the treated layer.
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申请公布号 |
US6717265(B1) |
申请公布日期 |
2004.04.06 |
申请号 |
US20020291027 |
申请日期 |
2002.11.08 |
申请人 |
INTEL CORPORATION |
发明人 |
INGERLY DOUGLAS B.;SCHROEDER BRETT R. |
分类号 |
H01L21/4763;H01L21/768;H01L29/40;(IPC1-7):H01L29/40 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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