发明名称 |
Method of forming a bottle-shaped trench in a semiconductor substrate |
摘要 |
A method of forming a bottle-shaped trench in a semiconductor substrate. First, the semiconductor substrate is selectively etched to form a trench, wherein the trench has a top portion and a bottom portion. An oxide film is then formed on the top portion of the trench. Next, the semiconductor substrate is etched through the bottom portion of the trench with a diluted ammonia solution as the etchant to form a bottle-shaped trench followed by removal of the oxide film.
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申请公布号 |
US6716696(B2) |
申请公布日期 |
2004.04.06 |
申请号 |
US20020206733 |
申请日期 |
2002.07.26 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
CHEN YI-NAN;LIU HSIEN-WEN |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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