| 摘要 |
A method for manufacturing a semiconductor device that mix mounts non-volatile memories and analog IC's may include the steps of: (a) forming a gate insulation layer 20, a floating gate 22, and a selective oxide insulation layer 24 on a semiconductor substrate 10; (b) forming an insulation layer 12 and a lower electrode 32 that composes a capacitor 300; (d) forming, in a capacitor region 3000, an insulation layer 31 by thermally oxidizing an upper surface section of the lower electrode 32; and (f) forming an intermediate insulation layer 26 and a control gate 23 that form a memory transistor 200, and a dielectric layer 30 and an upper electrode 34 that form the capacitor 300.
|
