| 发明名称 |
Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure |
| 摘要 |
A device and method for making a semiconductor-on-insulator (SOI) structure having a leaky, thermally conductive material (LTCIM) layer disposed between a semiconductor substrate and a semiconductor layer.
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| 申请公布号 |
US6717212(B2) |
申请公布日期 |
2004.04.06 |
| 申请号 |
US20010879724 |
申请日期 |
2001.06.12 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
JU DONG-HYUK;EN WILLIAM GEORGE;KRISHNAN SRINATH;RICCOBENE CONCETTA E.;KRIVOKAPIC ZORAN;AN JUDY XILIN;YU BIN |
| 分类号 |
H01L21/18;H01L21/762;H01L29/786;(IPC1-7):H01L31/392 |
主分类号 |
H01L21/18 |
| 代理机构 |
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