发明名称 |
Magneto-resistive bit structure and method of manufacture therefor |
摘要 |
A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.
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申请公布号 |
US6717194(B2) |
申请公布日期 |
2004.04.06 |
申请号 |
US20010999684 |
申请日期 |
2001.10.30 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LIU HARRY;LARSON WILLIAM;BERG LONNY;ZHU THEODORE;LI SHAOPING;KATTI ROMNEY R.;LU YONG;ARROTT ANTHONY |
分类号 |
H01L27/105;G11C11/15;H01L21/8246;H01L43/08;H01L43/12;(IPC1-7):H01L31/119 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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